PE01P30 Datasheet, semi one

* VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ)
* Super high dense cell design
* Advanced trench process technology
* Reliable and rugged
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General Features
* VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ)
* Super high dense cell design

The PE01P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ)
* Super .